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| to-220 -3l plastic-encapsulate transistors 2SD313 transistor (npn) features z low collector-emitter saturation voltage vce(sat)=1v(max)@i c =2a,i b =0.2a z dc current gain h fe =40~320@i c =1a z complementray to pnp 2sb507 maximum ratings ( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current -continuous 3 a p c collector power dissipation 1.75 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 100 a collector cut-off current i ceo v ce =60v, i e =0 1 ma emitter cut-off current i ebo v eb =4v, i c =0 100 a h fe(1) v ce =2v, i c =1a 40 320 dc current gain h fe(2) v ce =2v, i c =0.1a 40 collector-emitter saturation voltage v ce(sat) i c =2a, i b =200ma 1 v base-emitter voltage v be v ce =2v, i c =1a 1.5 v transition frequency f t v ce =5v, i c =500ma 8 mhz collector output capacitance c ob v cb =10v, i e =0,f=1mhz 65 pf classification of h fe(1) rank c d e f range 40-80 60-120 100-200 160-320 to-220 -3l 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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